| 摘要 |
PROBLEM TO BE SOLVED: To develop a resist film, to peel a residual resist and to process a metal thin film, semiconductor thin film or insulating thin film in complete dry processes. SOLUTION: A multilayered film 200 including a metal thin film, dielectric insulating film or semiconductor thin film or in which a part of these thin films is formed as a pattern is formed on a glass substrate 100. Further, a resist film 300 comprising a polymer material having urethane bonds and/or urea bonds is applied on the substrate 100 and irradiated with excimer laser beam through an exposure mask 400 having a specified opening pattern. The resist film 300 in the irradiated part is removed by abrasion development to obtain a resist film pattern. The exposed part through the resist film pattern is removed by etching, and then the residual resist film 300 is removed by abrasion development using excimer laser beam. |
