| 摘要 |
<p>PROBLEM TO BE SOLVED: To take secure preventive measures for ESD and LUP, and reduce the chip size to realize reduction in manufacturing cost, by spreading a conductor portion in an inner lead region, and holding and electrically connecting an element forming a preventive circuit between the inner lead and the conductor portion. SOLUTION: A static damage/latch-up preventive semiconductor device has a conductor portion 17 which is spread on the bottom portion of a semiconductor package 11 and connected to a power supply or GND, a chip 15 mounted at the center on the conductor portion 17, an element 13 forming a static damage/latch-up preventive circuit arranged on the conductor portion 17 and around the chip 15, and an inner lead 14 connected to the upper surface of the element 13. Then, by holding and electrically connecting the element 13 between the inner lead 14 and the conductor portion 17, a surge applied to the inner lead 14 is absorbed by the preventive circuit and then emitted to the power supply or the ground potential, GND through the conductor portion 17.</p> |
