发明名称 PROBING METHOD FOR PROPERTIES OF MATERIAL SURFACE LAYER AND DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To inspect the electronic state of a material surface layer, the activity of catalytic action or the like by an atomic scale as well as with nano-second or higher time accuracy. SOLUTION: A pulsated low-speed proton ray 1 in a nano-second time domain is converged on and irradiated to the reverse side of a thin film type probe sample 2, while a probe 3 is moved along the upper surface of the probe sample 2 in such a state as kept in contact and faced thereto. Then, positronium molecules Psn (n>=2, integer) are generated in the contact gap. Thereafter, a coherent annihilation gamma ray is detected and the positronium molecules Psn are observed separately from positrons and positronium Ps, thereby probing the properties of a material surface layer, particularly the activity of catalytic action or the like by an atomic scale and with nano-second or higher time accuracy.
申请公布号 JPH1031100(A) 申请公布日期 1998.02.03
申请号 JP19960185686 申请日期 1996.07.16
申请人 KAGAKU GIJUTSU SHINKO JIGYODAN 发明人 IKEGAMI HIDETSUGU
分类号 G21K7/00;G01N23/00;G01N23/22 主分类号 G21K7/00
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