| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film element that has a high gauge rate and a high resistivity and also can be machined easily on a small diaphragm, and its manufacturing method. SOLUTION: Silicon oxide film 2 is formed on a metal substrate 1 by the plasma CVD method, a thin-film strain gauge 3 that mainly consists of Cr and oxygen and contains oxygen by 32-45% is formed on the silicon oxide film 2 by the electron beam deposition method, and an electrode wiring 4 made of aluminum (Al) is formed at the terminal part of the thin-film strain gauge 3. Then, silicon oxide film 5 is formed on the surface side where the electrode wiring 4 of the metal substrate 1 is formed by the plasma CVD method, and a contact hole 6 is formed in the silicon oxide film 5 on the electrode wiring 4 by etching.</p> |
