发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve degrees of freedom for a ROM by having a first non- volatile memory erasing an electically written information by irradiation of ultraviolet ray and a second non-volatile memory electrically erasing information electrically written. SOLUTION: A microcomputer provided with an central processing unit(CPU) 100 and a nonvolatile memory storing program data and dictionary data of the CPU 100 on one semiconductor chip 1 is constituted. The first non-volatile memory (EPROM) 105 electrically performs write of information and erases the written information by irradiation of an ultraviolet ray. The second non- volatile memory (EEPROM) 107 electrically performs write of informations and electrically erasing the written informations. In this way, a ROM with a large capacity and a capability for rewriting can be obtained and an electrically rewritable ROM on a system can be obtained.</p>
申请公布号 JPH1074902(A) 申请公布日期 1998.03.17
申请号 JP19970221405 申请日期 1997.08.18
申请人 HITACHI LTD 发明人 KURODA KENICHI
分类号 G11C16/04;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/10;H01L21/824 主分类号 G11C16/04
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