摘要 |
<p>PROBLEM TO BE SOLVED: To improve degrees of freedom for a ROM by having a first non- volatile memory erasing an electically written information by irradiation of ultraviolet ray and a second non-volatile memory electrically erasing information electrically written. SOLUTION: A microcomputer provided with an central processing unit(CPU) 100 and a nonvolatile memory storing program data and dictionary data of the CPU 100 on one semiconductor chip 1 is constituted. The first non-volatile memory (EPROM) 105 electrically performs write of information and erases the written information by irradiation of an ultraviolet ray. The second non- volatile memory (EEPROM) 107 electrically performs write of informations and electrically erasing the written informations. In this way, a ROM with a large capacity and a capability for rewriting can be obtained and an electrically rewritable ROM on a system can be obtained.</p> |