Methods of forming semiconductor device assemblies and interconnect structures, and related semiconductor device assemblies and interconnect structures

摘要

A method of forming a semiconductor device assembly comprises forming on a first substrate, at least one bond pad comprising a first nickel material over the first substrate, a first copper material on the first nickel material, and a solder-wetting material on the first copper material. On a second substrate is formed at least one conductive pillar comprising a second nickel material, a second copper material directly contacting the second nickel material, and a solder material directly contacting the second copper material. The solder-wetting material is contacted with the solder material. The first copper material, the solder-wetting material, the second copper material, and the solder material are converted into a substantially homogeneous intermetallic compound interconnect structure. Additional methods, semiconductor device assemblies, and interconnect structures are also described.

主权项

1. A method of forming a semiconductor device assembly, comprising:
forming on a first substrate, at least one bond pad comprising a first nickel material over the first substrate, a first copper material directly on the first nickel material, and a solder-wetting material directly on the first copper material; forming on a second substrate, at least one conductive pillar comprising a second nickel material, a second copper material directly under the second nickel material, and a solder material directly under the second copper material; contacting the solder-wetting material with the solder material; and completely converting the first copper material, the solder-wetting material, the second copper material, and the solder material into a homogeneous intermetallic compound interconnect structure.