发明名称 MANUFACTURE OF SEMICONDUCTOR PROCESSED PART
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacture, in which movable electrode is not brought into contact with a semiconductor substrate during a drying process or due to vibration impact and manufacturing process steps are simple. SOLUTION: A sacrificial layer is formed on a semiconductor substrate 1, and a semiconductor layer is formed on the sacrificial layer on the semiconductor substrate 1. The intermediate layer of the sacrificial layer is easier to etch than its upper and lower layers. The semiconductor layer is processed to form a movable electrode 6 and the like. Then the sacrificial layer is etched to destroy the intermediate layer that is easy to etch, so that the unetched residues from the upper and lower layers that are resistant to etching form on the movable electrode 6 and the semiconductor substrate 1 projections 2a", 2c" that are opposite to each other are not is contact with each other. Then the workpiece is cleaned and dried to obtain a semiconductor processed part.
申请公布号 JPH10135488(A) 申请公布日期 1998.05.22
申请号 JP19960286628 申请日期 1996.10.29
申请人 MURATA MFG CO LTD 发明人 HASEGAWA TOMOYASU
分类号 G01P9/04;G01C19/56;H01L21/306;H01L29/84 主分类号 G01P9/04
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