GaSbGe PHASE CHANGE MEMORY MATERIALS

摘要

A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.

主权项

1. A phase change material, comprising GaxSbyGez, wherein x, y and z are atomic percentages, with a Ga atomic concentration x within a range from 20% to 45%, a Sb atomic concentration y within a range from 25% to 40% and a Ge atomic concentration z within a range from 25% to 55%.