发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more. |
申请公布号 |
US2016372636(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615171087 |
申请日期 |
2016.06.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG Kyung Wook;KIM Si Han;LIM Wan Tae;SHIN Eun Joo |
分类号 |
H01L33/46;H01L33/32;H01L33/58;H01L33/42;H01L33/50;H01L33/56;H01L33/06;H01L33/22 |
主分类号 |
H01L33/46 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor light-emitting device, comprising:
a light-emitting stack comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength; and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and comprising a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more. |
地址 |
Suwon-si KR |