DEVICE STRUCTURES FOR A SILICON-ON-INSULATOR SUBSTRATE WITH A HIGH-RESISTANCE HANDLE WAFER

摘要

Methods for forming a device structure and device structures using a silicon-on-insulator substrate that includes a high-resistance handle wafer. A doped region is formed in the high-resistance handle wafer. A first trench is formed that extends through a device layer and a buried insulator layer of the silicon-on-insulator substrate to the high-resistance handle wafer. The doped region includes lateral extension of the doped region extending laterally of the first trench. A semiconductor layer is epitaxially grown within the first trench, and a device structure is formed using at least a portion of the semiconductor layer. A second trench is formed that extends through the device layer and the buried insulator layer to the lateral extension of the doped region, and a conductive plug is formed in the second trench. The doped region and the plug comprise a body contact.

主权项

1. A method of forming a device structure using a silicon-on-insulator substrate that includes a high-resistance handle wafer, the method comprising:
forming a doped region in the high-resistance handle wafer; forming a first trench extending through a device layer and a buried insulator layer of the silicon-on-insulator substrate to the high-resistance handle wafer, the doped region having a lateral extension of the doped region extending laterally of the first trench; epitaxially growing a semiconductor layer within the first trench; forming a first device structure using at least a portion of the semiconductor layer; forming a second trench extending through the device layer and the buried insulator layer to the lateral extension of the doped region; and forming a conductive plug in the second trench, wherein the doped region and the plug comprise a body contact.