SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

Techniques are provided that can impart sufficient electrical conductivity to a semiconductor crystal exhibiting low doping efficiency for silicon atoms, such as InGaAs, by implanting only a small amount of silicon atoms. Such a semiconductor wafer may include a first semiconductor crystal layer, a second semiconductor crystal layer exhibiting a conductivity type that is different from the first layer, a third semiconductor crystal layer exhibiting the conductivity type of the first layer and having a larger band gap than the second semiconductor crystal layer, and a fourth semiconductor crystal layer exhibiting the conductivity type of the first layer and having a smaller band gap than the third semiconductor crystal layer. The fourth semiconductor crystal layer contains a first element that generates a first carrier of a corresponding conductivity type and a second element that generates a second carrier of a corresponding conductivity type.

主权项

1. A semiconductor wafer comprising:
a first semiconductor crystal layer exhibiting a first conductivity type that is one of a p-type and an n-type; a second semiconductor crystal layer exhibiting a second conductivity type that is different from the first conductivity type; a third semiconductor crystal layer exhibiting the first conductivity type and having a larger band gap than the second semiconductor crystal layer; and a fourth semiconductor crystal layer exhibiting the first conductivity type and having a smaller band gap than the third semiconductor crystal layer, wherein the first semiconductor crystal layer, the second semiconductor crystal layer, the third semiconductor crystal layer and the fourth semiconductor crystal layer are arranged in an order of the first semiconductor crystal layer, the second semiconductor crystal layer, the third semiconductor crystal layer and the fourth semiconductor crystal layer, the fourth semiconductor crystal layer contains a first element that generates a first carrier corresponding to the first conductivity type and a second element that generates a second carrier corresponding to the second conductivity type, and the fourth semiconductor crystal layer has a carrier concentration of 1×1019 [cm−3] or higher and a mobility of 1000 [cm2/Vs] or higher according to a Hall effect measurement.