| 发明名称 |
FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
One or more formation methods of a semiconductor device structure are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming spacer elements over sidewalls of the dummy gate stack. The method also includes removing the dummy gate stack to form a recess between the spacer elements. The method further includes partially removing the spacer elements such that an upper portion of the recess becomes wider. In addition, the method includes forming a metal gate stack in the recess and forming a protection element over the metal gate stack to fill the recess. |
| 申请公布号 |
US2016372566(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615257567 |
申请日期 |
2016.09.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
CHANG Che-Cheng;LIN Chih-Han;LU Chen-Hsiang;CHEN Wei-Ting;LIU Yu-Cheng |
| 分类号 |
H01L29/66;H01L23/522;H01L21/311;H01L21/28 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a dummy gate stack over a semiconductor substrate; forming spacer elements over sidewalls of the dummy gate stack; removing the dummy gate stack to form a recess between the spacer elements; partially removing the spacer elements such that an upper portion of the recess becomes wider; forming a metal gate stack in the recess; and forming a protection element over the metal gate stack to fill the recess. |
| 地址 |
Hsinchu TW |
