METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING A TRANSISTOR WITH A VERTICAL CHANNEL

摘要

In a method of manufacturing a semiconductor integrated circuit device, a pillar may be formed on a semiconductor substrate. A hard mask pattern may be formed on a top surface and a portion of a sidewall of the pillar. An electric field-buffering region may be formed in the sidewall of the pillar. A gate insulating layer may be formed on an outer surface of the pillar. A gate may be formed on the gate insulating layer.

主权项

1. A method of manufacturing a semiconductor integrated circuit device, the method comprising:
forming a pillar on a semiconductor substrate; forming a hard mask pattern on a top surface and a portion of a sidewall of the pillar; forming an electric field-buffering region in the sidewall of the pillar; forming a gate insulating layer on the pillar; and forming a gate on the gate insulating layer.