| 摘要 |
PROBLEM TO BE SOLVED: To prevent the steepness of composition difference at the boundary between a quantum well layer and a barrier layer from being lost by forming a superlattice structure layer by the MOVPE method and another semiconductor layer by the MBE method. SOLUTION: Since the molecular beam epitaxial(MBE) method can grow a semiconductor layer at a low temperature as compared with the metal organic compound vapor phase growth(MOVPE) method, a semiconductor layer can be formed at a temperature lower than the growing temperature of a superlattice structure layer by the MBE method on the superlattice structure layer after the superlattice structure layer is formed by the MOVPE method. When the growing temperatures of p-type clad layers 6 and 7 formed on a quantum well layer 5b and a barrier layer 5a are made lower than those of the layers 5b and 5a, the steepness of composition difference at the boundary between the layers 5b and 5a can be maintained even when the layers 5b and 5a undergo such a temperature hysteresis. Therefore, the light emitting efficiency of a GaN-based element is improved and the half value width of the spectrum of the output light of the element becomes smaller, resulting in the improved color purity of the element. |
