| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor intertia sensor, which is suited to mass- production because of low cost through the elimination of laser processing and is low in parastic capacity, highly sensitive and accurate for forming gap between electrodes. SOLUTION: A semiconductor intertia sensor 30 is provided with a movable electrode 26 on the upper side of a glass substrate 10, and a pair of fixed electrodes 27 and 28 are provided with the movable electrode 26 in between. The movable electrode 26 is formed by laminating a film 21a and a single crystal layer 22a, which can be etched without eroding silicon, and the fixed electrodes 27 and 28 are formed by laminating films 21b and 21c which can be etched without eroding silicon. The glass substrate 10 is bonded with the films 21b and 21c of the fixed electrodes 27 and 28, through a spacer layer 24 made of single-crystal silicon. |
