| 摘要 |
PROBLEM TO BE SOLVED: To dispense with a laser processing of a wafer by a method wherein the base end parts of a beam for supporting a movable electrode are provided on a silicon substrate via a glass spacer layer. SOLUTION: A glass spacer layer 13 is provided on a prescribed part on a silicon substrate 10 and a patterning of the layer 13 is performed to form a gap 11, while a structure 24, which consists of a movable electrode 26 and one pair of fixed electrodes 27 and 28, is superposed on one, side of a silicon wafer 22 via an oxide film 21a in such a way that the electrode 26 and the electrodes 27 and 28 respectively oppose to the substrate 10 and the layer 13, the electrodes 27 and 28 are anode-junctioned with the spacer 13 and the wafer 22 is formed integrally with the substrate 10. Then, the wafer 22 of the structure 24 is subjected to anisotropic dry etching at a low temperature using the film 21a as an etching stop layer to remove the wafer 22 and subsequently, the film 21a is selectively etched away, whereby a semiconductor inertial sensor 30 of a structure, wherein the movable electrode is floated over the gap 11 between the one pair of the fixed electrodes, can be obtained. |
