发明名称 |
Insulated gate field effect transistor and manufacturing method of the same |
摘要 |
A wide high concentration P<+> type region (20) is formed on the surface of an N<-> type epitaxial layer (2) formed on a P type substrate (1) in the vicinity of the edge portion of a cell region in which a transistor device is formed. As a result, holes generated at the outside of the cell region mostly flow through the P<+> type region (20) and reach to an emitter electrode (8). Therefore, the flow amount of the holes does not concentrate on a channel P well (4) for forming a channel region of the transistor device at the cell edge portion, whereby a ruggedness against a latch-up phenomenon can be improved. <IMAGE> |
申请公布号 |
EP0859415(A2) |
申请公布日期 |
1998.08.19 |
申请号 |
EP19980102097 |
申请日期 |
1998.02.06 |
申请人 |
DENSO CORPORATION |
发明人 |
OZEKI, YOSHIHIKO;OKABE, NAOTO;KATO, NAOHITO |
分类号 |
H01L29/78;H01L29/06;H01L29/10;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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