| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve bit storage density and to enable reducing the bit cost by making to flow a current in an impedance transistor by a reading transistor when a reading signal is activated, setting a state of a flip-flop by a first writing transistor when a writing signal is activated, and accumulating electric charges in a gate of an impedance transistor by a second writing transistor. SOLUTION: When a first writing transistor 308 is enabled, an input point 314 of a three-state flip-flop 304 is driven to a high or low voltage and a plus or minus code is expressed. When a second writing transistor 310 is enabled, electric charges are accumulated in a gate of an impedance transistor 302. When a reading transistor 306 is enabled, three kinds of current of positive, negative, and zero are caused between the impedance transistor 302 and the transistor 306, this state is detected by a sense amplifier 214, and a stored logical state is read.</p> |
