发明名称 |
A DEVICE FOR HEAT TREATMENT OF OBJECTS AND A METHOD FOR PRODUCING A SUSCEPTOR |
摘要 |
The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor. |
申请公布号 |
EP0865518(A1) |
申请公布日期 |
1998.09.23 |
申请号 |
EP19960933696 |
申请日期 |
1996.10.01 |
申请人 |
ABB RESEARCH LTD.;OKMETIC LIMITED |
发明人 |
KORDINA, OLLE;HERMANSSON, WILLY;TUOMINEN, MARKO |
分类号 |
C30B23/02;C30B25/10 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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