| 摘要 |
PROBLEM TO BE SOLVED: To make possible laser oscillation having a low threshold value of a semiconductor laser, using GaN system material. SOLUTION: A semiconductor laser has a quantum enclosure construction for carriers in an active layer 26 and the quantum enclosure construction has In0.15 Ga0.85 N in a quantum well layer 261. Construction of the quantum well layer has In0.05 Ga0.95 N in an obstruction wall layer 262, a thickness of the quantum well layer 261 is set thin as 1 nm, and a junction energy of excitons in the quantum enclosure construction is made to substantially match about an LO phonon energy, by making one sufficiently larger than one in a bulk. |
