| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon film at a high speed and at a low temperature. SOLUTION: The silicon film is formed by applying and thermally decomposing the mixture of a solution of higher-order silane and catalysis on a substrate 6. As the higher-order silane, higher-order silane expressed by a general formula of SinH2n+2 [(n) is an integer of n>=3] or haloganated higher-order silane expressed by a general formula of SinH1 Xn [X is any one of chlorine, fluorine and iodine on the condition of 1+m=2n+2, and (n) is an integer of n>=3] is used. As a catalysist, a substance composed of a material or solution containing nickel, iron, cobalt and platinum is used. |
