发明名称 |
DISHING REDUCING IN TUNGSTEN CHEMICAL MECHANICAL POLISHING |
摘要 |
This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate. |
申请公布号 |
SG10201600929T(A) |
申请公布日期 |
2016.09.29 |
申请号 |
SGT10201600929 |
申请日期 |
2016.02.05 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
MATTHIAS STENDER;BLAKE J. LEW;XIAOBO SHI |
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