| 摘要 |
PROBLEM TO BE SOLVED: To enable an LED array to be lessened in manufacturing cost and simplified in manufacturing process. SOLUTION: P-type semiconductor layers 13 are formed in a line on an N-type semiconductor block 11, and a first interlayer insulating film 12 provided with first openings 16a and N-side openings 17 is formed thereon. P-side electrodes 14 connected to the P-type semiconductor layers 13 through the first openings 16a and N-side electrodes 55 (N-side contact, electrodes 55a and N-side pad electrodes 55b) connected to the N-type semiconductor block 11 through the N-side openings 17 arc formed on the first interlayer insulating film 12. Furthermore, s P-side matrix wiring 4 connected to the prescribed P-side electrodes 14 is formed through the intermediary of a second interlayer insulating film 18. The P-side electrodes 14 and the N-side electrodes 55 are formed of the same conductive film material and through the same film forming process and patterning process. The P-side electrodes 14 and the N-side electrodes are formed of film of Au or Au alloy. |
