| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of constituting a photoelectric conversion device capable of manufacturing at a low temperature, a photoelectric conversion device superior to sensitivity from short wavelength to long wavelengths and a photoelectric conversion device improved in output voltage. SOLUTION: This method of constructing the photoelectric conversion device, in the event, comprises a carrier-collecting junction arranged on the first surface of a crystal semiconductor 10, having the first conductive type and a structure alternately laminated by an amorphous silicon based thin film 30 and the conductive film on the second surface of the crystal semiconductor 10. A constant carrier storage layer 13 is formed on the second surface with the amorphous silicon based thin film 30. The presence of the storage layer generating an electric filed on the surface of the crystal semiconductor drives back the minority carrier from the laminated layer between the amorphous silicon-based thin film 30 and the storage layer and enables realization of improvement in output voltage due to the carrier confinement of the photoelectric conversion device and the like, and the carrier collection efficiency. |
