| 摘要 |
PROBLEM TO BE SOLVED: To prevent the peeling-off of an electrode placed in a p-type AlInGaN and an n-type SiC by interposing a Ti layer between an Ni layer which makes contact with a semiconductor layer and an Au layer as a bonding metal layer. SOLUTION: A p-type GaN layer 11 has its surface cleaned by organic cleaning and acid cleaning, and thereafter, a Ni layer 12 is deposited as an ohmic layer by EB(element beam) vapor deposition method on the p-type GaN layer 11. Next, in a N2 atmosphere, annealing treatment is performed at 400 deg.C for example. Next, a Ti vapor deposition layer 13 and Au Vapor deposition layer 14 are sequentially deposited by EB vapor deposition method. In succession, Au plated layer 15 is deposited by using an electroplating method on the Au vapor deposition layer. Finally, the Au plated layer 15 and Au vapor deposited layer 14 are etched to a predetermined pattern, and next the Ti layer 13 is etched and the Ni layer 12 is etched, thereby completing the electrode on p side with respect to the p-type GaN layer 11. |
