| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of a device characteristic due to a hot carrier effect by connecting a signal source to the gate of a 1st transistor of an inverter that consists of 1st and 2nd n type MOS transistors and to the gate of a complementary p type MOS transistor respectively. SOLUTION: A voltage signal of a negative logic from a signal source 1 is given to a p type MOSFET2 and an n type MOSFET3 through an RC transmission line, it reaches the MOSFET2 faster than the MOSFET3 because of the delay of an inverter 4 and the MOSFET2 first becomes conductive. As a result, the quantity of drain current that flows into the MOSFET3 is suppressed, and the deterioration of a device characteristic due to a hot carrier effect can be suppressed. Also, the dullness of voltage signal which is inputted to a gate of the MOSFET3 is eliminated and the voltage signal can be steep by the inverter 4 that is arranged before an input to the gate of the MOSFET3. |
