发明名称 DRIVING CIRCUIT FOR MOS GATE TYPE ELEMENT
摘要 PROBLEM TO BE SOLVED: To reduce noise of the switching operation of the MOS gate type element constituting the main circuit of a power converter. SOLUTION: A driving circuit 20 for IGBT1 consists of MOSFETs 21 to 24 and a control circuit 25 and turns on/off MOSFET 21 and MOSFET 22 alternately; and the MOSFET 23 is turned on with a specific amplitude only for a specific period after the MOSFET 21 is turned on and the MOSFET 24 is turned on for a specific period after the MOSFET 22 is turned on and when the gate voltage of IGBT1 decreases below a specific value, thereby reducing noise in the switching operation without spoiling the switching speed of IGBT1.
申请公布号 JPH1197994(A) 申请公布日期 1999.04.09
申请号 JP19970254417 申请日期 1997.09.19
申请人 FUJI ELECTRIC CO LTD 发明人 MINOTANI YOSHINARI
分类号 H03K17/04;H03K17/16;H03K17/56 主分类号 H03K17/04
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