| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of leak current between adjacent light emitting diodes, by providing a buffer layer, one conductivity type semiconductor layer and an opposite conductivity type semiconductor layer on a substrate, and providing opposite conductivity-type semiconductor layer in the buffer layer. SOLUTION: A buffer layer 2, one conductivity type semiconductor layer 3 and the opposite conductivity-type semiconductor layer 4 are provided on the substrate 1. Electrodes are connected to the one conductivity type semiconductor layer 3 and the opposite conductivity type semiconductor layer 4. The opposite conductivity-type semiconductor layer 2b is provided in the buffer layer 2. The buffer layer 2 is constituted of a first GaAs layer 2a, a p-type GaAs layer 2b, a second GaAs layer 2c, an InGaAs layer 2d and a third GaAs layer 2e. The opposite conductivity-type semiconductor layer 2b provided for at least part of the buffer layer 2 contains p-type impurities such as zine, for example, and it is formed by setting the flow rate of raw gas at the time of forming the GaAs layer 2b to a prescribed range. |
