| 摘要 |
PROBLEM TO BE SOLVED: To quickly generate a mask layout corresponding to a changed exposure condition, even if the exposure condition in lithography process is changed. SOLUTION: An evaluation equation representing a mask dimension L of a pattern width is generated with a continuous function, whose variables are a target design dimension of a pattern in lithography process, width dimensions S1 S2 of a first and second spaces positioned on both sides of the pattern, and an exposure condition in the lithographic process. After a pattern, which is to be an object for dimension control, is extracted from a plurality of patterns constituting an LSI pattern, a line thickness dimension L of a pattern on the mask which realizes a target design dimension is calculated using the evaluation equation a mask for the LSI pattern is generated using the calculated mask dimension L. |
