| 摘要 |
PROBLEM TO BE SOLVED: To enable a high-luminance display improved in the reflectivity characteristic of a device, by forming the transparent electrode on a phase difference plate out of a specific transparent conductive material. SOLUTION: A reflection plate 5 is formed on a photoresist resin 3 and a transparent planarization film 7 is formed thereon and further, the quarter λphase difference plate 9 is formed thereon. The quarter λ phase difference plate 9 is formed of org. matter and the TFT substrate side transparent electrodes 11 are formed thereon. The transparent electrodes 11 are formed of the In2 O3 -ZnO based transparent conductive material (IXO) having good light transmittance and specific resistance characteristic in an amorphous state of low-tap. deposition. The IXO is good in the light transmittance and specific resistance characteristic in the amorphous state right after non-heating deposition and does not, therefore, require a heat treatment. The spectral transmittance thereof is extremely high even in the amorphous state that deposition is executed at a low temp. Then, the reflectivity characteristic of the reflection type display element is improved and consequently, the high-luminance display (bright display) is made possible. |
