发明名称 |
Method for fabricating a titanium resistor |
摘要 |
According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.
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申请公布号 |
US5899724(A) |
申请公布日期 |
1999.05.04 |
申请号 |
US19960647392 |
申请日期 |
1996.05.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
DOBUZINSKY, DAVID MARK;FUGARDI, STEPHEN GERARD;HAMMERL, ERWIN;HO, HERBERT LEI;RAMAC, SAMUEL C.;STRONG, ALVIN WAYNE |
分类号 |
H01L27/04;H01L21/02;H01L21/822;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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