| 摘要 |
A nonvolatile semiconductor memory device for storing data by introducing electrons into a floating gate through a tunneling oxide film under an electric field of a control gate includes a switching circuit for supplying a reference high voltage during a normal erase mode and a test bias voltage during a test mode. In the test mode, the switching circuit can create a status where a self-field is applied between the floating gate and the source, and makes it easy to find out cells that are deteriorated due to trapping of holes into the oxide film.
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