Method for forming a semiconductor device using anodic oxidation

摘要

An improved method for manufacturing an insulated gate field effect transistor is described. The method comprises the steps of forming a semiconductor film on an insulating substrate, forming a gate insulating film on said semiconductor film, forming a gate electrode on said gate insulating film with said gate insulating film inbetween, anoding said gate electrode in order to coat an external surface of said gate electrode with an oxide film thereof and applying a negative or positive voltage to said gate electrode with respect to said semiconductor film. Lattice defects and interfacial states caused by the application of a positive voltage during the anoding are effectively eliminated by the negative voltage application.