发明名称 SWITCHED RELUCTANCE MOTOR DRIVING CIRCUIT
摘要 <p>A switch reluctance motor drive circuit includes first drive circuits (50) for driving a plurality of high switching elements (23, 24, 25), in response to an input signal (Hin) for driving a gate of the high switching element, and second drive circuits (52) for driving a low switching elements (26, 27, 28), in response to an input signal (Lin) for driving the gates of the low switching element. A single DC voltage source is commonly applied to the first drive circuits, and the first drive circuits each have a transistor (T1) connected between a gate (G) of the switching element (e.g., 23) and the DC voltage source to turn on the switching element (23) corresponding thereto, and a second transistor (T2) connected between the gate (G) and source (S) of the switching element (23) to turn off the switching element (23). A single DC voltage source is commonly applied to second drive circuits, and the second drive circuits each have a third transistor (T3) connected between the gate (G) of the switching element (26) and the DC voltage source to turn on the switching element (e.g., 26) corresponding thereto, and a fourth transistor (T4) connected between the gate (G) and source (S) of the switching element (26) to turn off the switching element (26).</p>
申请公布号 KR100187268(B1) 申请公布日期 1999.05.15
申请号 KR19960019439 申请日期 1996.05.31
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 PYO, SANG-HYUN
分类号 H02P25/08;H02P27/06;(IPC1-7):H02P7/05 主分类号 H02P25/08
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