| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor switching element, wherein the back side of a semiconductor support substrate is mounted on a conductive substrate, and when one of a pair of output electrodes is electrically connected to the conductive substrate, the output capacitance between the output electrodes can be reduced. SOLUTION: This switch element comprises an n-type semiconductor layer 1 formed on an n-type Si-made semiconductor support substrate 10 via an insulation layer 11 with a drain electrode 7, a source electrode 8 and a gate electrode 6b formed on the surface of the semiconductor layer 1, and an insulation film 12 on the back side of the support substrate 10. The support substrate 10 is die-bonded to the conductive substrate, composed of a lead frame to electrically connect the source electrode 8 to the conductive substrate. The capacitance between the drain electrode 7 and the conductive substrate is a series of a first parasitic capacitance component which is formed between the semiconductor layer 1 and support substrate 10 and a second parasitic capacitance component resulting from the insulation film 12. |
