发明名称 |
MOS circuit configuration for switching high voltages on a semiconductor chip |
摘要 |
The MOS circuit configuration allows switching high voltages on a semiconductor chip. In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity type as the substrate. The substrate and the transistors formed in the well are p-conductive. In this way it is possible to dispense with deep insulating wells which require special technology.
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申请公布号 |
US5925905(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19970899746 |
申请日期 |
1997.07.24 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HANNEBERG, ARMIN;TEMPEL, GEORG |
分类号 |
G11C16/06;G11C5/14;G11C16/12;G11C16/14;H03K3/356;H03K17/10;H03K17/693;(IPC1-7):H01L29/772 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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