发明名称 DAMASCENE INTERCONNECTION AND SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor device comprising an insulating layer, interconnection grooves formed in the insulating layer and communicating with a semiconductor chip, and pad grooves communicating with the interconnection grooves. The pad grooves include projections formed by leaving part of the insulating layer unremoved. After conductor layer is formed on the insulating layer, including in the interconnection grooves and the pad grooves, the conductor layer is removed by a CMP technique, while the projections serve to prevent the conductor layer in the pad grooves from being overpolished.</p>
申请公布号 WO1999038204(P1) 申请公布日期 1999.07.29
申请号 JP1999000225 申请日期 1999.01.22
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