| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a sense amplifier for memory array without requiring a reference voltage circuit high in performance and simple in configuration. SOLUTION: FETs different are channel width are used for two pull-up paths or pull-down paths respectively. For example, when voltage at node 108 is equal approximately to voltage st node 120 at the time of turning on a FET 124, pull-up is caused at the node 108 and pull-down is caused at the node 120, the node 108 is stabilized in a high state and the node 120 is stabilized in a bias state, by making channel width of a first pull-up FET 104 larger than that of a second pull-up FET 114 or making channel width of a second pull- down FET 116 larger than that of a first pull-down FET 106. On the other hand, when voltage of the node 108 is lower than that of the node 120 by some threshold value or more, the node 108 is made low and the node 120 is made high while resisting the bias state, and they are stabilized.</p> |
