Substrathalterung für SiC-Epitaxie

摘要

The invention relates to a substrate support which eliminates the risk of contamination of the substrate during processing, for example during generation of an epitaxy layer on the wafer, and to a method for producing same. According to the invention such a device for holding a substrate, which comprises a susceptor (1) as support for the substrate (2) to be coated, is characterized in that the susceptor (1) comprises an insert (3) whose surface (5) is at least partly covered by a metal carbide layer (6) of a predefined thickness. The method for producing an insert (2) for a susceptor (1) with a surface coating (6) of metal carbide consists of the following steps: producing a metallic preform, embedding the metallic preform into a carbon-containing powder, heating the metallic preform and the carbon-containing powder to an elevated temperature, working the hardened tempered preform, and arranging the worked preform on the susceptor (1) such that it serves as a insert (2).