| 摘要 |
PROBLEM TO BE SOLVED: To make the mechanical strength compatible with the electric characteristics and radiation characteristics. SOLUTION: An n<-> type Si element substrate 21 has a through-hole 22, a strip-like p-type semiconductor diaphragm 23 is formed so as to close one opening face of the hole 22, and first and second metal electrodes 25, 26 are provided on both end faces of the diaphragm 23. When a voltage is applied to the first and second electrodes 25, 26, a current flows in the diaphragm 23 to heat the diaphragm 23 and radiate infrared rays. One surface 21a of the element substrate 21 and surface of the diaphragm 23 are covered with an Si oxide film for accelerating the infrared radiation. |
