GATE DRIVE CIRCUIT FOR SEMICONDUCTOR DEVICE OF INSULATING GATE TYPE AND POWER CONVERTER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of shortening the time until the turn off after inputting a gate signal, without decreasing the resistance value of a gate resistor. SOLUTION: In a gate drive circuit for a semiconductor device of insulating gate type provided with a first DC voltage source 2A and a first switch 3A for supplying a turn on signal, and a second DC voltage source 2B and a second switch 3B for supplying a turn off signal, through a gate resistor 4 to a gate terminal of the semiconductor device 1, a circuit connecting in parallel a diode 5 and a capacitor 6 is connected in series between the switch 3B and the resistor 4, and a third DC voltage source 2C for charging the capacitor 6 with an electric charge which is smaller than the gate charge necessary for turning off of the semiconductor device 1 is provided.