| 摘要 |
PROBLEM TO BE SOLVED: To easily control the design of a conductive band quantum level and a valence band quantum level and to reduce carrier overflow in a conductive band by forming the intermediate layers of a III-V group mix crystal semiconductor containing nitrogen in the upper layer and the lower layer of an active layer formed of a III-V group mix crystal semiconductor layer which does not contain nitrogen. SOLUTION: A barrier layer (guide layer or a clad layer) 403, an active layer intermediate layer (GaInNP layer) 402, an active layer center layer (GaInP layer) 401, an active layer intermediate layer (GaInNP layer) 402 and a barrier layer (guide layer or the clad layer) 403 are sequentially formed on a GaAs substrate with epitaxial growth by an MOCVD method, for example. The barrier layer 403 and the active layer center layer 401 are selected for compositions which are lattice-matched with the substrate. The active layer center layer 401 becomes GaInP. In the GaInNP layer 402, nitrogen is added to the composition similar to the active layer center layer (GaInP layer) 401 and the layer becomes Ga0.5 In0.5 N0.005 P0.995 . |
