| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor, a semiconductor laminated structure, and a semiconductor light-emitting device capable of accelerating the formation of growth nuclei and obtaining a good crystallinity mixed crystal semiconductor comprising an N element in the group V elements. SOLUTION: When a GaInNAs layer 5 on a GaAs layer 4 is grown by this manufacturing method, a part of As on a surface of the GaAs layer 4 is replaced by N by feeding N(nitrogen) material beforehand. A phase boundary 8 between the GaAs layer 4 and the GaInNAs quantum well layer 5 is a phase boundary (GaNAs), replacing a part of As on the surface of the GaAs layer 4 to N. |
