| 摘要 |
<p>PROBLEM TO BE SOLVED: To make possible programing by connecting an access transistor between a junction between first, second nonvolatile transistors serially connected between first, second data lines and the first, second nonvolatile transistors forming an output node and the junction between a reference voltage line and the first, second nonvolatile transistors. SOLUTION: A nonvolatile memory element contains the first and second nonvolatile transistors 10, 12 of an n-type serially connected between a program data low line 14 and a program data high line 16. Further, the nonvolatile memory element contains the access transistor 20 connected between the output node Q of the memory element being the conjunction between the first, second nonvolatile transistors 10, 12 and the reference voltage line 22. By supplying program data level voltages PDL, PDH, an erase mode, a programing mode, an operation mode, a read-back mode and a power supply mode are constituted.</p> |
