A process for preparing highly conductive phosphorous doped N-type microcrystalline hydrogenated silicon thin film at low power by plasma enhanced chemical vapour deposition method
摘要
申请公布号
IN183391(B)
申请公布日期
1999.12.18
申请号
IN1994CA50119
申请日期
1994.06.27
申请人
INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE
发明人
RAY, SWATI, DR.;BARUA, A. K., PROF.;SAHA, SUBHASH, CH.
