| 摘要 |
<p>Monocrystalline silicon is deposited by a catalyst CVD method by using a crystalline sapphire layer (50) formed on an insulating substrate (1) as the seeds, and a silicon epitaxial layer (7) is formed. P-type impurity ions are implanted into a monocrystalline silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a monocrystalline silicon layer (14). In a monocrystalline silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperature.</p> |
