LIGHT EMITTTING DIODE AND METHOD OF MANUFATURING THE SAME

摘要

PURPOSE: An LED and method of manufacturing the same are provided to have a very low contact resistance and to be able to enhance the morphology of electrode surface. CONSTITUTION: A first epitaxial layer(3) is formed on a semiconductor substrate. An active layer is formed on a predetermined area of the first epitaxial layer. A second epitaxial layer(5) is formed on the active layer. A first electrode(10) is formed on a predetermined area of the first epitaxial layer and consists of MSi silicide. A second electrode is formed on a predetermined area of the second epitaxial layer and consists of MSi silicide. Here, the M may be one of transition metals selected from IIIB-VIIIB groups.