| 摘要 |
PROBLEM TO BE SOLVED: To prevent pits from occurring in a compound semiconductor layer and to improve it in surface homological property by a method, wherein a III-V compound semiconductor layer which contains In is formed on a GaAs layer that serves as a buffer layer, contains Al or NA, and is formed on a substrate. SOLUTION: An Al0.4Ga0.6As layer 2 and a Ga0.84In0.16As layer 4 are formed on a GaAs-containing substrate 1. Or a GaN0.04As0.96 layer 3 and a Ga0.84In0.16As layer 4 are formed on the GaAs-containing substrate 1. MOCVD conditions for the GaAs layer 2 (or GaAs layer 3) is respectively set with TMG: 22.3 μmol/min, TMA: 16.2×10-6 μ mol/min (or DMHy: 1.8×103 mol/min), AsH3: 1.3×103 (or 0.9×103) mol/min, pressure: 110×103 Pa, and growth temperature: 800 (or 670) deg.C. The MOCVD condition for the GaInAs layer 4 is set with, TWG: 22.3 μ mol/min, TMI: 9.15 μ mol/min, AsH3: 1.3μ103 mol/min, pressure: 110×103 Pa, and growth temperature: 800 (or 670) deg.C. |
