发明名称 SEMICONDUCTOR PHASE MODULATOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a phase-shift modulator which has a high sensitivity so as to respond a low control voltage and is independent of polarization, by specifying a structure of active waveguides of which each comprises at least one 1st active layer and one 2nd compensating active layer. SOLUTION: Active waveguides comprise at least one 1st active layer 11 and at least one 2nd compensating active layer 12. The materials Q1, Q2 composing each of these two layers 11, 12 are four-element material such as undoped InGaAsP. The 1st active layer 11 has a 1st photo-luminescence wavelength, and the 2nd compensating active layer 12 has a 2nd photo-luminescence wavelength, and the modulator operates at an operating wavelength longer than the 1st photo-luminescence wavelength by a value in a range of 80-200 nm (preferably 80-150 nm), and the operating wavelength is longer than that of the 2nd photo-luminescence by a value exceeding 300 nm (preferably 350 nm).</p>
申请公布号 JP2000171765(A) 申请公布日期 2000.06.23
申请号 JP19990347189 申请日期 1999.12.07
申请人 ALCATEL 发明人 DUCHET CHRISTIAN
分类号 G02F1/015;G02F1/025;(IPC1-7):G02F1/025 主分类号 G02F1/015
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