FABRICATION METHOD OF FERROELECTRIC CAPACITOR

摘要

PURPOSE: A fabrication method of ferroelectric capacitor is provided to effectively suppress loss according to the generation of etching residue and the etching. CONSTITUTION: A fabrication method of ferroelectric capacitor comprises: a first step forming a first conductive film and a ferroelectric film; a second step forming a first etching mask defining a lower electrode on the ferroelectric film with photoresist; a third step selectively etching the ferroelectric film to form ferroelectric film patterns for exposing the first conductive film and removing the first etching mask; a forth step forming a second conductive film and forming a second etching mask on the second conductive film; and a fifth step selectively etching the second conductive film, ferroelectric film and the first conductive film and then removing the second etching mask.